Complex Precision.

• 科比应该向乔丹学习zz

  2008-06-14

  Tag：光影食色

  发信人: greenoranger (青橙), 信区: BasketballForum 标  题: 科比应该向乔丹学习 发信站: 水木社区 (Fri Jun 13 12:41:29 2008), 站内 从娃娃抓起，在队内挖潜 从训练中搭建出冠军队伍 每年夏天都叫嚣着换队友，干什么玩意 真有奥尼尔这样的队友，又因为当不了老大而不爽 乔丹对队友训练的苛刻严格是全联盟闻名的 用科尔的话说，新手来的时候要加入“冠军速成班” 有一个小伙被逼急了，都到了要向乔丹挑战的地步 像皮彭这种素质的，如果不是到了乔丹身边，根本达到不了他今日的成就 科尔退役的时候是著名的三分手，他就是从公牛队走出来的 真正以球星身份来到乔丹身边的，也就第二次三连冠的篮板王一个人而已 科比带队几年带出谁了呢 一个团队的意志品质是由他的领袖人物决定的 赛前大家，包括专家，黑蜜，都说湖人的角色球员厉害 真到了比凝聚力专注度的时候怎么样呢 当领袖，不是自己是勇士就行的 信任队友，也不是每场刷几个十佳助攻就行的 论个人能力，科比已经是当今联盟第一人了 什么时候真的打造出，而不是呼唤出，一支王朝球队，那他就有机会比肩那些历史巨星 -- ※ 来源:·水木社区 http://newsmth.net·[FROM: 162.105.49.*] Richard：乔丹是我的第一偶像，同时我也是不折不扣的科密。很多人拿科比和帮主比，就目前看，科比差帮助还是比较远。喜欢科比在场上坚毅的眼神和果感的手腕，还有强烈的求胜心，但是想达到帮助的高度光有这些还远远不够--当然你可以说：“乔丹算个毛，科比得过81分！”水木上转载的这篇文章，很有道理。

  发表于22:42 | 阅读全文 | 评论 0 | 编辑 | 推荐

• III-Vs and Ge look to help CMOS

  2008-06-13

  Tag：技术人生

  From: compoundsemiconductor.net Cracks are starting to appear in silicon CMOS. Although the International Technology Roadmap for Semiconductors states that MOSFETs with strained silicon channels will be suitable down to the 22 nm node and possibly beyond, projections of device performance indicate otherwise. Studies show a gap will appear between projected and actual performances as node sizes fall to less than 65 nm, and this will only get wider with increased scaling (figure 1). To make matters worse, history suggests that one of the main sources for transistor improvement is an increase in channel carrier velocity. Recent work by MIT's Ali Khakifirooz reveals that this depends more strongly on low field mobility than was previously believed, which will make it even harder for silicon CMOS to stick to its roadmap. Fortunately, it should be possible to improve channel mobility significantly by switching to other materials, such as III-Vs and germanium. III-Vs promise to increase electron mobility by 10–30 times, which makes them great candidates for high-speed, low-power n-channel transistors. However, they cannot make good p-channels, which are also needed for CMOS, because their hole mobilities are relatively low. This is where germanium comes in – it has a hole mobility four times that of silicon. Turning to other materials is not a new idea. In 1986, prototype 16- and 32-bit GaAs RISC processors were developed by Vitesse Electronics Corporation and Texas Instruments. These delivered fast clock speeds of up to 200 MHz, but they were a commercial failure due to high costs and high power consumption. The history of germanium dates back even farther, but this element hasn't been used in mainstream FETs for decades. However, there is good reason to believe that the time has come for III-Vs and germanium to make a lasting impact. For one thing, the industry is very short of options. It would prefer to steer clear of even more immature technologies, which rules out transistors employing graphene as the channel material and FETs operating via impact ionization or quantum mechanical tunneling. This means that germanium and III-V MOSFETs will be the only real alternatives to silicon in the coming years. Encouragingly, research by Jesús del Alamo's group at MIT, as well as a partnership between Intel and QinetiQ, has delivered some promising results with III-V n-channel HEMTs. These efforts have shown that III-V FETs can be less power hungry and faster than their silicon counterparts at the low supply voltages required for billion-transistor integration. However, before we get carried away, it's important to realize that there are some massive hurdles to overcome before we can fabricate non-silicon channels in CMOS. These dwarf those that were faced by the industry when it made the recent transition from traditional SiO2 to high-k dielectrics. Dictated by economics, FETs with non-silicon channels will have to be realized on large-area silicon substrates. This presents a tremendous challenge because it is difficult to unite materials into a near-perfect single-crystal epistructure when they have different thermal expansion coefficients, lattice constants and, in the case of III-Vs, crystal types. Many hours have been thrown at this problem and, although there has been an intensified effort in recent times, potential roadblocks still remain. Non-silicon transistors are also susceptible to poor off-state performance resulting from the narrower bandgap of the material employed – InGaAs, InAs, InSb or germanium. This increases band-to-band tunneling at the high electric fields that exist at the drain side of the gate of scaled devices, which increases leakage current and cuts the transistor's Ion/Ioff ratio. The density of states available for conduction in high-mobility III-V channels is also less than one-hundredth of that for silicon equivalents. Some of these changes in material characteristics hinder the performance of inversion-type MOSFETs, the standard workhorse of silicon CMOS. Minority carrier mobilities in surface inversion channels are relatively low. Large surface potentials are needed to produce the surface inversion required for transistor operation, leading to a narrowing of surface quantum wells with large energy quantization, which further reduces the density of states and leads to an increase in the proportion of electrons scattered into satellite valleys. In short, inversion-type MOSFETs may not be the best option for III-Vs. However, recent work at various groups, including Freescale, the University of Glasgow, UK, and Interuniversity Microelectronics Center (IMEC), Belgium, has shown that it is possible to address some of the problems associated with non-silicon MOSFETs. For example, efforts at Freescale have revealed that progress can be made on the III-V side by turning to flatband- or accumulation-mode MOSFETs, which are promising high-mobility devices. Flatband MOSFETs Although the flatband MOSFET is similar to its inversion-mode equivalent – it shares planarity, enhancement-mode terminal characteristics and the ability to be implemented as either a surface or a buried channel device – there are fundamental differences in device operation. The flatband-mode MOSFET, unlike its inversion-mode cousin, is a majority carrier device in the on state and a minority carrier device in the off state. This means that the transistor is able to benefit from the higher majority carrier mobility and increased on-state current, in addition to the potentially lower off-state leakage current. This reduction in the leakage current can result from both deep depletion within the device and minority carrier extraction measures. All non-silicon MOSFET developers face the challenge of fabricating a satisfactory oxide interface. For decades the only material capable of producing a good enough interface for device operation was a combination of silicon and oxygen. Even today the leading CMOS manufacturers insert a thin SiO2 interfacial layer between silicon and a high-k dielectric. However, promising contenders are emerging for device quality interfaces on germanium, such as ultrathin fully strained epitaxial silicon layers and thermally grown GeO2 with in situ deposited high-k dielectrics. It is also possible to make device-quality oxide–semiconductor interfaces for GaAs-based MOSFETs by depositing Ga2O molecules into the arsenic dimers of a clean GaAs surface. Conventional oxidation – the process used for elemental semiconductors – is not an option because it produces a high density of trap levels within the GaAs bandgap. Heterogeneous integration is clearly an important challenge but it is not the only criterion for judging the progress of non-silicon FETs. After all, it is not just the device's performance that matters but also its suitability for incorporation into CMOS. The Intel and MIT groups have built some high-performance n-channel III-V PHEMTs that have a gate length of less than 100 nm, high-channel electron mobilities of 10,000–20,000 cm2/Vs and a superior gate delay and power-delay-product compared with state-of-the-art silicon NMOS transistors. However, their Schottky contact gate electrodes limit scalability and progress in this area will require the addition of oxide layers to address CMOS requirements. One device that shows promise for fulfilling CMOS requirements is the GaAs-based n-channel MOSFET that we have developed at Freescale and the University of Glasgow. This flatband-mode device, which features a Ga2O/GaAs interface and an In0.3Ga0.7As channel, has been developed for radio-frequency applications and delivers a superior performance to PHEMTs (figure 3). More important is that it has the potential to usurp BiHEMT and BiFET technologies and kick-start a new era of RF front-end integration in applications such as mobile handsets. Success in this market would be driven by the planar MOS configuration, which employs a common epitaxial layer structure allowing single-chip integration of power amplification, RF switching, and digital and analog functions. These MOSFETs are of limited relevance for CMOS due to their lower mobility compared with higher indium mole fraction InGaAs channel layers. Introducing indium into this layer with a mole fraction of 50% or more requires a switch from a GaAs to an InP substrate. At Freescale we have done this and built a thin-body structure that contains an In0.75Ga0.25As channel by MBE (figure 4). This epiwafer has a mobility of 8000 cm2/Vs, but other MOSFET wafers with similar layer structures have shown electron mobilities of more than 10,000 cm2/Vs – 20 times as great as silicon NMOS. Our flatband-mode InP MOSFETs deliver an impressive on-state performance – transconductance exceeds 700 µS/µm for a 1 µm gate length. This compares favorably with InGaAs MOSFETs built by both Peide Ye's group from Purdue University and a collaboration between IBM and Princeton. They feature gate oxides deposited by atomic layer deposition, and they have electron mobilities and a transconductance of 1200 cm2/Vs and 230 µS/µm, respectively. Germanium inversion-mode MOSFETs with a thin epitaxial silicon layer are being developed by IMEC. Such devices can deliver peak hole channel mobilities of more than 350 cm2/Vs on unstrained p-channel devices. Mobility increases to more than 640 cm2/Vs on strained devices – three times as high as the peak value for silicon. Optimizing implantations and silicon passivation leads to good control of short channel effects and enables devices with a peak transconductance of 800 µS/µm for a 125 nm channel length. At 1.5 V drain voltage this transistor delivers 722 µA/µm – more than double that of a p-channel silicon MOSFET with a 120 nm channel. If III-V and germanium channel MOSFETs are to provide a viable future beyond silicon CMOS then they will have to scale to diminutive CMOS dimensions. However, it's not just a question of physical miniaturization as these transistors must deliver enhanced electron or hole transport properties. In addition, and in contrast to GaAs MOSFETs, there is still the problem of making a high-quality oxide–semiconductor interface for III-V channel materials with CMOS relevance. This problem plagues all of today's high indium mole fraction channel technologies, and it is evident from the difficulty associated with turning the device off (figure 5). "Everything can be done in silicon" is a claim that our community contests. And with the scaling of CMOS feature sizes delivering diminishing returns, there is reason to believe that with a collaborative spirit the compounds and germanium can gain a solid foothold. Indeed, it is possible that the saying "everything can be done on silicon" will eventually find universal acceptance. But whatever the outcome for non-silicon MOSFETs for CMOS, one thing is certain: the semiconductor community has some exciting and challenging years ahead. Further reading A Khakifirooz et al. IEEE Transactions on Electron Devices 55 (in press). J R Lineback 1986 Electronics June 9 21. B C Cole 1986 Electronics September 18 57. S Datta et al. 2005 IEDM Technical Digest 763. D H Kim et al. 2007 IEDM Technical Digest 629. R Metzger 2007 May Compound Semiconductor 16. M Passlack 2006 IEEE Transactions on Electron Devices 53 2773. A Delabie et al. 2007 Appl. Phys. Lett. 91 082904. M Hale et al. 2003 J. Chemical Physics 119 6719. R J W Hill et al. 2007 IEEE Electron Device Letters 28 1080. R J W Hill et al. 2008 Electronics Letters 44 498. Y Yuan et al. 2007 IEDM Technical Digest 637. G Nicholas et al. 2007 IEEE Electron Device Letters 28 825. M K Hudait et al. 2007 IEDM Technical Digest 625. About the author Joining Motorola in 1995 from AT&T Bell Laboratories, Matthias Passlack led and contributed to R&D efforts at Motorola and Freescale Semiconductor in the field of III-V MOS materials, processes, characterization, devices and physics. He left Freescale in March. Marc Heyns joined IMEC in 1986. He became an IMEC fellow in 2001 and a professor at the KU Leuven in 2005. His current research topics include novel high-k dielectric materials, advanced cleaning and surface preparation, and novel devices made on high-mobility substrates, such as germanium and III/V, nanowires, carbon nanotubes and graphene. Iain Thayne has worked on III-V materials and transistors for 23 years, initially at Philips Research Labs and since 1998 at the University of Glasgow, where he is professor of ultrafast systems. He coordinates III-V MOSFET research funded by the UK EPSRC, the US SRC and the EU. Richard: 总有令人激动的技术。

  发表于11:24 | 阅读全文 | 评论 0 | 编辑 | 推荐

• 两篇报道

  2008-06-13

  Tag：技术人生

  微电子所研制成功高性能Ku波段功率放大器模块      近日，微电子所在新型微波功率放大器模块研究领域获得突破性进展。中国科学院微电子研究所—四川龙瑞微电子联合实验联合研制成功的Ku波段功率放大器模块，在13.7-14.5GHz频率范围内，功率增益 ，输出峰值功率 ，总工作效率达到13.6%。该模块有效体积为 ，总体重量为 ，并且通过了严格的高低温可靠性测试，关键技术指标都达到了国内一流水平。     该模块采用结构简单并且可靠性高的平面微带线完成微波链路，有效减小了重量和体积。在机械结构上设计了新颖的双层腔体，将微波电路和控制电路、偏置电路等进行隔离，消除了高频和低频电路的相互影响，并且提高了模块的可靠性。针对内匹配微波功率器件，设计了可以提高稳定性、宽带性能、低频振荡抑制能力及谐波抑制能力的偏置电路。采用先进的设计方法及工艺技术，成功攻克了微波功率放大器设计中的寄生振荡、参量振荡和效率衰退等难题，在有效载荷、效率等方面创造了国内记录，拥有完全自主知识产权。     Ku波段微波功率放大器模块是卫星通信等应用领域的核心部件。随着应用系统的不断演进，研制小型化、大功率、高效率和高可靠性的微波功率放大器模块，具有重要意义。   微电子所新型微波功率放大器模块研究再获突破     继前不久成功研制出Ku波段功率放大器模块后，微电子所在此基础上又研制成功了Ka波段大功率模块，在新型微波功率放大器模块研究领域再次获得重大进展。     此次研制成功的Ka波段功率放大器模块，在30-38GHz工作频率范围内，输出峰值功率Ppk≥15W，功率增益Gp≥55dB，总工作效率在全频段内≥13%。模块的有效体积为 ，总体重量 。所有关键技术指标都达到了国内一流水平，部分技术达到国际先进水平。     该模块采用全波导结构，具有低损耗、高效率、驻波良好的特点。独特的波导合成结构，实现了毫米波功率放大器的模块化设计，易于级联实现更大输出功率，初步级联试验已经突破百瓦量级，拥有完全的自主知识产权。     随着毫米波技术的广泛应用，对毫米波信号源的输出功率也提出了越来越高的要求。目前，单个固态器件的输出功率因受到散热、阻抗匹配、工艺的限制而无法达到应用的要求，必须开展功率放大模块的研制。新颖的波导合成结构的提出，既可以保证高的合成效率，也将微波链路损耗降到最低。同时，创造性的可定制、可级联模块化设计，便于实现更大规模功率的输出，具有极强的市场竞争力。该模块的研制成功为研究所在毫米波大功率器件及模块研究领域提供了重要的自主创新平台。

  发表于10:53 | 阅读全文 | 评论 0 | 编辑 | 推荐

• 高频S参数测试中的去嵌入

  2008-06-05

  Tag：技术人生

  好长时间没有更新Blog了，看paper看得满脑子都是VBIC了，今天灌一篇，说一下测试和建模。 S参数测试中的去嵌入问题，以前觉得挺高深的，但是实际做过之后也不觉得有多困难了--当然，如果精度要求很高的话就另当别论了。在画版图的时候，除了器件之外一般还要有用于去嵌入的Open和Short图形，Open图形用来去除寄生电容的影响，Short图形用来去除寄生电感和电阻的影响。去嵌入的一般步骤如下： （1）测量Open图形的Y参数[Yo]与Short图形的Y参数[Ys]； （2）用[Ys]减去[Yo]，得到：[Yso]=[Ys]-[Yo]； （3）将[Yso]换为Z参数[Zso]，得到互连线寄生电感和电阻； （4）将器件S参数换为Y参数[Yd]； （5）用[Yd]减去[Yo]，得到：[Ydo]=[Yd]-[Yo]，去除了寄生电容； （6）将[Ydo]换为Z参数[Zdo]； （7）用[Zdo]减去[Zso]，得到：[Zdem]=[Zdo]-[Zso]，去除了寄生电感和电阻； （8）最后将[Zdem]换为S参数[Sdem]，即为器件去嵌入之后的本征S参数。 测试在ICCAP和Probe Station平台上完成--注意测试参考平面的校准；处理可以在ADS中方便地完成。 另外，这段时间在葛霁师兄的指导下做了我们的Q10_RE10 HBT的建模工作。最大感触是：很多工作，只有动手去做，才能真正理解，靠paper是永远不能解决问题的。经过一系列繁琐的测试、去嵌入及数据处理工作之后，终于得到一套比较完整的VBIC模型参数。下图是我的S参数拟合曲线： 似乎误差还在可以接受的范围之内，反正也存在工艺稳定性的误差，所以也不必苟求严丝合缝。测试其实很快，关键是数据处理比较复杂：Flyback，Foward G-P，Reverse G-P，Cold-Capacitance，Forced-Vbe I-V，Forced-Ibe I-V，Active S-parameters等等，还要拟合和优化。不得不说的一点是：VBIC模型的初始参数对于拟合的收敛至关重要。 还有就是上周的Load-pull测试了。新的Load-pull非常棒，校准之后测试非常简单。我一个人花了半个下午加半个晚上的时间就完成了一个Wafer上器件的三频点抽测，得到一堆数据。从测试结果上看，我们的工艺一致性和稳定性还是不错的，但是在测试当中发现一个问题： 1. 4GHz： Zopt=44.6502+34.4645j; 2. 6GHz:  Zopt=10.6537-14.1309j; 3. 8GHz:  Zopt=101.3300+46.057j。 在频率6GHz的时候，Zopt表现为容性--而且同一Wafer上不同区域的很多器件都是这样，那么就是说我们的器件在6GHz表现出感性。以前从来没有见过这种性质，而且按照Cripps先生的理论分析，似乎也不会出现这种情况。考虑了很久，似乎有一个比较合理的解释：寄生，自谐振，但是无法证明。 *** 顺便说一下上周末参加的USTC北京校友大会。科大50年前在玉泉路成立，到现在，走过了一段不平凡的历史。那天我去做了志愿者，和很多传说中的人物亲密接触，见到了很多偶像--比如张亚勤，赵忠贤，黄吉虎等等。提起黄吉虎老师--传说中的一大名捕，他老人家真是风趣幽默，给我们讲述了当年钱学森先生给他们考试的事情--这个早有传说，但没想到是真事情：两道题，考了一整天，晕倒四名学生，并且开根号乘以十也来源于此事。科大人身上，有一种特质，我只能感受，但说不出来，也许可以叫做：不凡。 *** 上周的上海之行，和两个土人再聚首，唯有感叹时光如梭！

  发表于09:56 | 阅读全文 | 评论 0 | 编辑 | 推荐

• A new market for GaAs PAs

  2008-05-28

  Tag：技术人生

  From: compoundsemiconductor.net The emerging market for so-called femtocells will explode over the next five years, providing a key new application for power amplifier (PA) components, and a likely boost for makers of GaAs devices. Reports from ABI Research, In-Stat and Wintergreen Research all predict a sharp increase in deployments of femtocells, with accompanying demand for the various semiconductor components that they require. Femtocells, which are miniature cellular base stations, are increasingly viewed as the best solution to providing reliable broadband cellular connectivity inside homes and offices. As anybody living in a house with thick stone walls will attest, indoor cellular reception can be extremely variable. That’s because the high-frequency signals being transmitted between a cellular handset and a remote base station are absorbed to varying degrees depending on the specific location of the two. For conventional mobile services like voice calls and simple messaging, that isn't much of a problem – but with demand for data-hungry services increasing, broadband coverage needs to be less patchy and more reliable. Now it seems that some network operators have concluded that the most cost-effective way of ensuring that kind of coverage is for customers who want broadband cellular access to deploy femtocells in their homes and workplaces. The US market analysis company Wintergreen Research recently issued a report forecasting that global shipments of the tiny base stations, which today stand at virtually zero, will grow to nearly 48 million in 2012 as the predicted cost of the cells drops to just $100. In a less bullish report, In-Stat predicts 31 million unit shipments of femtocells and related picocell and microcells by the same year. "One barrier to roll-out is the need to reduce the cost per unit of the hardware," states the Wintergreen report. "Initially it may be that operators provide femtocells to customers as part of a service plan." Wintergreen analysts Susan Eustis and Ellen Curtiss note that major companies such as fiber-optic networking giant Cisco Systems have a vested interest in femtocells, because the technology could ultimately be integrated into consumer hardware like set-top boxes, which Cisco already sells. "Calls would go from the handset, to the femtocell, down the broadband connection, and back onto the cellular network," they explain. "This beats having to set up lots more [conventional] base stations." In another report, Stuart Carlaw from ABI Research predicts that the market for semiconductors used in femtocell applications will grow from less than $72 million in 2008 to nearly $2 billion by 2013. As always, that market will be dominated by silicon devices, but femtocells will also require power amplifiers operating at cellular frequencies – an application dominated by GaAs at the handset level, but by silicon LDMOS in conventional base stations. Because femtocell signals are designed to operate over only a short range, the high power of silicon LDMOS technologies is not a pre-requisite, suggesting that incumbent handset PA suppliers like RF Micro Devices and Skyworks Solutions may be at an advantage. Skyworks Solutions has already made inroads into the early market, and is supplying Samsung with four types of components for use in the Korean firm's femtocells, including the wideband-CDMA SKY77410 power amplifier. Although the unit demand from femtocells might not match that from mobile handsets initially, the Wintergreen analysts believe that when the cost of the technology drops to $100, things will really take off, with an anticipated 95.5 million unit shipments in 2014. The numbers quoted by the various analyst reports differ widely, but they do all agree that femtocells are emerging as a key cellular technology: "3G services will have limited success without addressing the indoor coverage issue," says In-Stat's report. "The cost to address these shortcomings with traditional macro base station solutions is too high, and not possible for most mobile operators." In-Stat analyst Allen Nogee added: "Microcells, picocells, and femtocells address these challenges in a much more cost-effective manner." "By providing smaller and less powerful base stations in smaller areas, like public spaces, offices, and even homes, carriers can provide better coverage in more specific areas without a huge capital investment." *** 这次来上海，似乎对上海的印象好了一些。

  发表于11:10 | 阅读全文 | 评论 0 | 编辑 | 推荐

• 哀悼与团结的曲线zz

  2008-05-23

  Tag：心情故事

  以下为转载内容： ___________________ 哀悼与团结的曲线 2008年5月22日 上午 10:07:00 发表者：中国工程研究院工程师方坤 汶川大地震——这场三十年来降临在华夏大地上最大的一次灾难，令整个中国陷入巨大的震惊与无比的悲痛之中。仅仅在几天之前，"地震"仿佛还是一个与你我无关的字眼，"汶川"也不过是厚厚的地图集中一个无人知晓的偏僻的所在。而在今天，一切都改变了。 当我们依照惯例整理和分析谷歌搜索引擎的流量数据时，一条从未见过的曲线出现在我们面前。当意识到发生了什么事情时，我们的眼睛湿润了。 2008 年 5 月 19 日 14 时 28 分，全国人民默哀三分钟，悼念在汶川大地震中遇难的同胞。 中国网民——他们中很多人如此习惯于通过谷歌来搜寻生活、工作和学习中所需 的各种信息。而在这一刻，他们——中国网民，散布在九百六十万平方公里神州大地上的中国网民，说着标准普通话的中国网民和带着四川、陕西、河南、浙江、广东、安徽、贵州、福建口音的中国网民——在这一刻，他们全部放下手中的键盘和鼠标，立起身来，低下他们的头颅，为他们的祖国，为他们的同胞。那一刻，庄严，肃穆。 所有人都这样做了；没有人监督，也不需要监督。这条谷歌搜索流量的曲线说明了一切。 在那一刻，谷歌的全体员工也放下手中的工作，齐聚会议室，为地震中遭遇不幸的同胞致哀，为我们多灾多难的民族祈祷。但我们的数据仪没有停止工作，它默默地记录下这条笔直下降的流量曲线。 2008 年的磨难把我们如此真切的凝聚在一起，2008 年的磨难让我们如此接近的与国家靠在一起。 如果机器也会思想，如果我们的数据仪也能读懂这条曲线背后的含义，它也会流泪吗？ 或者，它更应该感动？因为它看到—— 一个伟大的民族，在巨大的悲痛中低下她的头颅。而当她擦干眼泪，她的头颅扬得更高。 ________________________________ *** CNN在中国举国默哀3分钟后，发表了题为《情感在中国举国默哀中流淌》的报道。文章说，在四川省的省会城市成都，数千百姓的情感在哀悼活动中得到了宣泄。在180秒的哀悼活动结束后，他们高喊着支持灾区的口号。CNN现场记者口述道：“在静默的那一刻，所有人的手紧紧握在一起，一些人哭泣着。他们对于如此多人的遇难感到难以置信和震惊。” 美联社19日14时31分就发出了快讯，并注意到这是“中国现代史上第一次为国家领导人以外的人实行全国性哀悼”。洛杉矶时报将之称为“越来越人性化的政府努力向民众提供精神安慰和国家支持”。而德新社等都解读出了“设立哀悼日顺应民心民意，向全世界昭示了中国政府和中国人民对生命的关爱以及万众一心救灾重建的决心”。 新华社在评论中说，三分钟默哀，是送行也是壮行：送别不幸的生命，也送别灾难和悲伤；凝聚起民族无穷的力量，气壮山河地继续前行！正如一家国外媒体所说：一个能够触动十万救援人员的国家，一个企业和私人捐款达到数百亿的国家，一个因争相献血、自愿抢救伤员而造成交通堵塞的国家，永远不会被打垮。希望必将与中国同在。 人民日报在社论中说，救援还在继续，挑战仍在眼前。愿全民哀悼凝聚起抗震救灾、重建家园的顽强信念，用我们的不屈斗志和实际行动激励国人，告慰逝者--“任何困难都难不倒英雄的中国人民”。 南方都市报在评论中说，国家哀悼日让我们感受到源自国族共同体的内抚慰和沉痛表达。面对死难，我们唯一的希望，就在于更顽强的生命联合。当过不再拒斥表达普通公民的情感，当文明置于最宽广坚实的的人性之上，我们也必能历尽劫难而入煌煌现代之林。

  发表于13:30 | 阅读全文 | 评论 0 | 编辑 | 推荐

• RFMD shelves transceiver development

  2008-05-14

  Tag：技术人生

  From: compoundsemiconductor.net RF Micro Devices is to cease development of transceivers for next-generation handsets and sell off its GPS solutions business, reducing its headcount by 350 employees. The GaAs chip maker estimates that the move will save it $75 million annually, largely from the decision not to plow research resources into development for broadband wireless transmission protocols, like wideband CDMA, Long-Term Evolution (LTE) and WiMAX. Although the move will cost $40 million-$50 million in restructuring charges, RFMD should begin to reap the full financial benefit of stopping research on transceiver components, which have typically been fabricated in CMOS and SiGe, by the end of 2008. The Greensboro, North Carolina, company will now refocus those resources on its more profitable compound semiconductor RF components businesses. "[Transceivers] hid the amounts of money we're making in other parts of the business," said Bob Bruggeworth, RFMD's CEO. "We said given the amount of money we’re spending on transceivers, we’d be better off spending that in other areas, where we’ve demonstrated we get better returns, without the uncertainty and risk."   RFMD will continue to sell transceivers, so the company expects minimal impact on its overall sales. Indeed, it still expects to see its Polaris 2 and Polaris 3 transceiver modules feature in handsets that are yet to hit the market. However, the fast pace of development in wireless technology will likely mean that customers will stop buying RFMD's transceivers within three years. Development will continue for integrated front ends, with a focus on GaAs rather than transceivers, that could feature in future handsets. For the GPS business, RFMD has already engaged with potential buyers for whom the technology would be a strategic fit, and is currently in negotiations over the transaction. The company's shift in strategy came on the back of a $31.6 million loss in RFMD's closing quarter of fiscal year 2008, a figure that compared badly with the $21.4 million profit that it had posted in the same period last year. But Bruggeworth anticipates that the latest move will bring about a much more profitable company. He described the decision to drop transceivers and GPS as "a very significant event that positions RFMD to deliver the largest increase in profitability in our company’s history". Investment analyst John Lau, of Jefferies and Company, agreed with Bruggeworth's outlook, saying that the company should now be significantly more efficient. "We believe this is one of the most fundamental shifts in product focus for RFMD and will lead to greater profitability going forward," he said. Richard: RFMD不在研发和生产收发机（Transceiver），比如著名的Polaris系列。号称要focus在利润率更高的GaAs等化合物半导体的射频前端领域。技术vs.市场，最近越来越感触这两者之间平衡的艺术。想到一个词：看上去很美。 *** 季度亏损 RFMD开始裁员并退出部分无线领域 由于出现季度亏损，芯片厂商RF Micro Devices Inc.(RFMD)正在削减部分无线领域中的全部产品开发支出，包括蜂窝收发器和GPS解决方案。此举将影响到大约350人的饭碗。RF Micro上月裁过一次员，现在计划把年度支出缩减大约7500万美元。该公司将继续向主要客户提供有关其目前一代Polaris收发器产品的支持。 RF Micro将在未来两个季度提列4000－5000万美元的重组费用。该公司表示，计划把投资集中在RF器件开发方面，包括蜂窝前端和其它手机部件。该公司公布上季营业收入为2.219亿美元，低于上年同期的2.573亿美元；亏损1650万美元，上年同期是获利3010万美元。 目前预计6月当季的营业收入为2.3-2.45亿美元，比上季增长4-10%。按公认会计原则(GAAP)计算，目前预计稀释后的每股净亏损为0.03-0.04美元，而且其中未计入任何重组费用。 *** 为在大地震中消逝的同胞们默哀。 中国，加油！

  发表于14:42 | 阅读全文 | 评论 0 | 编辑 | 推荐

• 多难兴邦

  2008-05-13

  Tag：复杂生活

  2008，在中国历史上会留下浓重的一笔。不仅是因为奥运盛事在北京举办，更因为2008的中国经历了一连串的不顺利。一月二月，南方雪灾；三月四月，***、圣火受阻、火车相撞；五月，历史性地震灾难。有人说，2008只过了不到一半就发生这么多事情，谁知道后面还有什么更大的艰难呢？ 曾先生说：“多难兴邦”。不无道理，任何一个国家的发展壮大，都要经历各种各样的灾难：无论是天灾还是人祸。但是，相信中华民族的强大凝聚力会在灾难之时淋漓尽致地表现出来，中国人“一方有难，八方支援”的优良传统会永远继承，我们战胜每一个灾难，就取得更大的进步。有些人非常消极，一副怨妇嘴脸，怨天尤人，不知道他们是怎么想的。我想，连美国--地球上最发达的国家，都饱受龙卷风和雪灾之苦，更有“卡特里娜”带来的人道灾难；我们中国在九八洪水的时候所表现的凝聚力，让世人钦佩。等着吧，让事实狠狠地抽他们的嘴巴。 一个个鲜活的生命骤然消逝。我们虽远在千里之外，却不能置身事外。

  发表于09:27 | 阅读全文 | 评论 0 | 编辑 | 推荐

• 赛季最佳阵容

  2008-05-09

  Tag：光影食色

  这五个人实至名归，都是我喜欢的球员。不过我喜欢的还有邓肯，吉诺比利。 祝愿我的马刺今天能赢。

  发表于08:09 | 阅读全文 | 评论 0 | 编辑 | 推荐

• 送别师姐

  2008-05-07

  Tag：复杂生活

  下午师姐回重庆了。再过一个月，她与师姐夫的爱情结晶就要降临人世，祝福他们。也许这个月是师姐夫人生中最难忘的一个月，他妈妈病危，师姐临产。果果师姐和瞻师兄替师姐夫送师姐回重庆，现在正在火车上。日子过得真快，刚认识师姐的时候，他们才在准备结婚。想起和师姐、湖哥、中子还有圆圈圈在成都快乐充实的日子，那真是人生的一种财富。

  发表于22:47 | 阅读全文 | 评论 2 | 编辑 | 推荐