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读点书
2009-06-24
爱因斯坦在《培养独立思考的教育》一文中说：“用专业知识教育人是不够的。通过专业教育，他可以成为一种有用的机器，但是不能成为一个和谐发展的人。要使学生对价值有所理解并且产生热诚的感情，那是最基本的。他必须对美和道德上的善有鲜明的辨别力。否则，他--连同他的专业知识--就更像是一条受过很好训练的狗，而不像一个和谐发展的人。”
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成功的四个要素：自己要行；要有人说你行；说你行的人要行；身体要行。
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于丹《这个时代，读书到底有何用》：
我把现在的阅读分成有用的阅读和无用的阅读。所谓有用的阅读就是为知识的阅读，为了拿一个文凭、为了在职业中提升自己的阅读。
在这个时代，有用的阅读当然是重要的。但是，比这更美好的境界是无用的阅读，就是为生命、为成长的阅读，它不见得给你一个直接的文凭，不一定给你专业的技能，但是它让你的心灵辽阔，给你幸福感和安全感。
读书在我们今天这个时代到底有什么用呢？我想除了应对世界之外，更重要的是确认自我。今年的毕业生都在抱怨，入行的门槛越来越高了，入行的薪水越来越低了。他们说，我们这拨孩子怎么这么倒霉，扩招进来的，而出门的时候偏偏赶上了危机，到处不是减薪就是裁员。我们怎么办？社会给我们的价值评定又是什么？
我想不管这个社会现在给你什么评定，关键是自己怎么认定自己。
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村上春树《当我谈跑步时，我谈些什么》：
已经说过，我是那种不予过问也会长胖的体质。我太太却不管吃多少，做不做运动，都不会变胖，连赘肉都不长。我常常寻思：“人生真是不公平啊！”一些人很努力却不一定得到的东西，有些人无需努力便唾手可得。
不过细想起来，这种生来易于肥胖的体质，或许是一种幸运。比如说，我这种人为了不增加体重，每天得剧烈运动，留意饮食，有所节制。何等费劲的人生啊！然而倘使从不偷懒，坚持努力，代谢便可以维持在高水平，身体越来越健康强壮，老化恐怕也会减缓。什么都不做也不发胖的人，无须留意运动和饮食。这种体质的人，每每随着年龄增长而体力日渐衰退。不着意锻炼的话，自然而然，肌肉便会松弛，骨质便会疏松。什么才是公平，还得以长远的眼光观之，才能看明白。
这样的观点或许也适用于小说家的职业。天生才华横溢的小说家，哪怕什么都不做，或者不管做什么，都能自由自在写出小说来。就彷佛泉水从泉眼中汩汩涌出一般，文章自然喷涌而出，作品遂告完成，根本无须付出什么努力。这种人偶尔也有，遗憾的是，我并非这种类型。此言非自夸：任凭我如何在周遭苦苦寻觅，也不见泉眼的踪影。如果不手执钢凿孜孜不倦地凿开磐石，钻出深深的空穴，就无法企及创作的水源。为了写小说，非得奴役肉体、耗费时间和劳力不可。打算写一部新作品，就必得重新一一凿出深深的孔穴来。然而，长年累月地坚持这种生活，久而久之，就技术和体力而言，我都能相当高效地找寻到新的水源；感觉一个水源变得匮乏时，也能果决而迅疾地移到下一个去。而习惯仅仅依赖一处自然水源的人，冷不丁地这么做，只怕轻易做不来。
人生基本是不公平的，这是不刊之论。即便身处不公之地，我以为亦可希求某种“公平”。这也许得费时耗力，甚或费了时耗了力，却仍是枉然。这样的“公平”，是否值得刻意希求，当然要靠各人自己裁量了。
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TriQuint Semiconductor announced it has signed a framework agreement with ZTE Corporation, a manufacturer in China for wireless communication systems equipment. The document states ZTE will procure TriQuint components, including but not limited to CDMA, GSM and WCDMA ASICs, in the value of no less than US$50 million in the 2009 calendar year.
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躲进世界的角落 -- 几米
2009-06-24
嘘——躲进世界的角落，请保持安静，忘记时间，做回你自己。
在这里，你自己就是整个宇宙。
我不记得从什么时候开始，我喜欢躲进世界的角落；我也不知道该怎么说，只希望有一天你们会懂我的心！
当我忧愁烦恼的时候，当我暴躁烦怒的时候，当我心情乱糟糟的时候，甚至当我快乐得不得了的时候，我都想换个角度，重新看看我的世界。
啊！如果有一天，我站在世界的最顶端，我会比现在更幸福吗？
它让人快乐，也让人忧伤。
它大方地让人怀抱希望，也残酷地要人面对失望。
有时候我害怕寂寞，希望一直有人陪在我身边。
有时候我喜欢孤独，厌烦纷扰的人群。
怎样才能找到一种神奇的魔药，好让我打败内心的恐惧呢？
大家都应该拥抱一个像天一样大的希望！
但是飞起来就一定会掉下去吗？
难道只有梦想与想象，才会让我们飞得又高又远吗？
但愿在世界的任何角落里，每个人都可以拥有满满的幸福！
尽管这个世界漏洞百出，但真的不用担心！
每个漏洞都会找到一个补洞的人。
但是如果我们轻易放弃我们该做的，世界同样也会放弃我们！
最后，连角落都不给我们躲藏了！***
《读者》2009-13的卷首语，只读了两句，就体会到了自己的心境，就是这个样子。
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Nitronex snubbed by RFHIC's Cree switch
2009-06-24
From: compoundsemiconductor.net
Korean vendor says it favors performance and reliability provided by SiC substrates over silicon for GaN wireless components.RFHIC says that GaN-on-SiC devices can be competitive with products manufactured on silicon wafers, thanks to economies of scale offered by its strategic partner Cree.
“Although GaN-on-SiC is not the cheapest GaN solution, Cree makes it a viable alternative even compared to the most cut-throat LDMOS,” said Kevin Kim, senior international sales manager at RFHIC.
Cree announced that it had signed a strategic agreement with the fabless Korean wireless component manufacturer to supply it with GaN HEMTs at the beginning of June.In 2006 RFHIC originally embarked on a strategic alliance with Cree's Durham, North Carolina, neighbor Nitronex, which produces GaN devices on silicon substrates.Now, RFHIC's chief technology officer Samuel Cho has indicated that the latest deal is part of a clear move away from GaN-on-silicon.“We converted our product line and future direction to Cree's GaN-on-SiC HEMT technology based on its superior thermal and electrical characteristics as well as its outstanding robustness and reliability,” he said.
The high-volume LED manufacturing business that Cree is better known for is founded on its SiC expertise, and RFHIC says that is a major attraction. Now the Korean firm is exploiting low-defect, stable supply and comparatively low cost substrates, among other advantages that Cree can provide.“Their fab overhead is being shared with SiC power products,” Kevin Kim told compoundsemiconductor.net. “With increasing the wafer diameter and a large total number of processed wafers in the fab, we expect there will be a significant cost benefit in the long run.”Kim also said that the collaboration strategy, in which Cree focuses on device and transistor level products and RFHIC works on hybrid and pallet amplifiers, suits his company.
Key customers in the broadcasting and communication markets are already receiving RFHIC's GaN-on-SiC wideband amplifiers. Higher volume production is scheduled for the final quarter of 2009, and the majority of the projects are multi-year contracts.
In response to Cho's comments, Nitronex director of marketing Ray Crampton claims his company's latest products have better thermal performance than any of its competitors' offerings.“We have won major military design-wins at tier one customers based on both performance and robustness advantages over SiC-based GaN HEMTs,” he said. “Our robustness is proven and accepted as is our electrical and thermal performance.”
“While I respect the potential of any competitor, RFHIC has not shown the ability to take advantage of the performance benefits of GaN and I don't expect them to be a significant player on the competitive battle field.”
GaN development for RF applications owes a great deal to the DARPA Wide-Bandgap Semiconductor (WBGS) program, which has featured Cree in the largest of its three development projects.In March Raytheon, which has collaborated with Cree on this project, was the first to announce it had entered Phase III of WBGS with a $23.9 million contract.Fellow WBGS pioneer TriQuint gained $16.5 million to progress the strand of the project in which it is leading Lockheed-Martin, BAE Systems, II-VI and IQE RF in early June.No public statement has yet been made by the third strand, led by Northrop Grumman and including RFMD via its acquisition of Sirenza, on whether it is entering Phase III.Each of the three RF device makers involved in the WBGS projects has now launched a GaN foundry service. RFMD officially launched its offering at the MTT-S International Microwave Symposium this month, after TriQuint and Cree launched theirs last year.
Richard: 嘿嘿，Nitronex在公然鄙视RFHIC。RFHIC放弃Nitronex的GaN-on-Si转向Cree的GaN-on-SiC，怪不得Nitronex不高兴。不过，就我们使用Nitronex的GaN HEMT的经验，确实不像他所宣称的那么好。当然，不能排除我们和RFHIC一样，不是他们的产品不好，只是我们没有能力挖掘出他们产品的潜能。一想到Cree的GaN HEMT，就想起来吴毅峰。哎，我们不知道努力多少年，才能看到他的背影。
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真的厌倦了这样的学习和工作，就像一个无头的苍蝇，满怀冲出黑暗的理想，不断振翅奋发，却永远不知道出口到底在哪里，甚至连路线是否正确都不知道。在最需要一盏明灯指引方向的时候，没有；在最需要有人来对我高声棒喝，告诉我“嗨，小伙子，你走错方向了”的时候，没有......
--呃，呃，my Jordan，我这是在抱怨吗？警醒。即使不知道对错，也不能停止追求。
斗争，斗争！！
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再说一遍：“使自己永远优秀的办法就是，永远和比自己优秀的人在一起。”
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RFMD® Launches GaN Foundry Services
2009-06-12
RFMD® develops and manufactures unmatched compound semiconductor technologies and is now offering foundry services for our industry-leading 0.5μm GaN on SiC process. RFMD’s world-class manufacturing scale, supported by the largest III-V factory in the world, enables best-in-class cycle times backed by our on-time shipment pledge. RFMD’s track record as a high-volume, reliable supplier has earned us “preferred partner” status with the industry’s top OEMs while our extraordinary level of customer service continues to set us apart from the competition.
RFMD GaN-at-a-Glance
- 0.5-um gate length HEMT transistor
- High power density (6 to 8W/mm CW)
- High breakdown voltage of 200V for 48V CW or 65V pulsed operation
- High efficiency >65% achieved for RFMD products
- Ft=11GHz, Fmax=18GHz
- MTTF>1e8 hours at Tchannel=150 centidegree
RFMD GaN: Multiple Efficiency Benefits:
- Scale: Build GaN in existing GaAs fabs-scale-driven cost
- Linearity and Bandwidth: improved performance especially for LTE/WiMAX
- Green: more power efficient per mW of RF power
- Power and Size: more RF power per mm^2
- Opex/Capex: BOM and running costs reduced -- reduced total cost of wonership
Applications benefiting from RFMD GaN technology:
- Wireless Infrastructure
- Broadband Communications
- Defense Communications and Systems
- CATV Distribution
- SATCOM
RFMD GaN is production ready. It’s a mature, robust technology with extraordinary reliability. Compared to GaAs and Si, RFMD GaN has much higher breakdown voltage and power densities, enabling applications not possible with competing technology. RFMD’s GaN high power density also allows for smaller devices, reducing the capacitance while enabling high impedances, wider bandwidths, and reduced cost. Additional benefits include reduced circuit complexity, industryleading efficiency of operation, reduced cooling requirements, and lighter weight.
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Richard: RFMD也来了，紧随TriQuint(Sep., 2008)。不知后继者是谁？总之，GaAs，LDMOS，你们要小心了，谁让你们是2G，人家是3G呢？
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昨晚婷儿从安徽回来了，不过马上就又要去内蒙，后面还有甘肃排着队。真的很辛苦，慰问一下！
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做学生有一点比较好：很单纯，想说什么就可以说什么--只要是能说的。我不是big mouth，我只说能说的话，呵呵。珍惜最后的学生时光，等工作了就绝不能那么随便了。
有人说我是狂热的工作狂，欣慰又无奈。
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Palm Pre teardown by Portelligent
2009-06-11
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